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Silicon Carbide (SiC) Power Devices Market by Product, Application, and Geography - Forecast and Analysis 2020-2024

Silicon Carbide (SiC) Power Devices Market by Product, Application, and Geography - Forecast and Analysis 2020-2024

Published: Jun 2020 120 Pages SKU: IRTNTR44208

The silicon carbide power devices market size has the potential to grow by USD 1.06 billion during 2020-2024, and the market’s growth momentum will accelerate during the forecast period.

This report provides a detailed analysis of the market by product (diodes, modules, and transistors), application (UPS and PS, PV inverters, IMDS, EV/HEVs, and others), and geography (APAC, Europe, North America, South America, and MEA). Also, the report analyzes the market’s competitive landscape and offers information on several market vendors, including Cree Inc., Fuji Electric Co. Ltd., Infineon Technologies AG, Littelfuse Inc., Mitsubishi Electric Corp., ON Semiconductor Corp., Renesas Electronics Corp., ROHM Co. Ltd., STMicroelectronics NV, and Toshiba Corp.

Market Overview

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Market Competitive Analysis

The market is concentrated. Cree Inc., Fuji Electric Co. Ltd., Infineon Technologies AG, Littelfuse Inc., Mitsubishi Electric Corp., ON Semiconductor Corp., Renesas Electronics Corp., ROHM Co. Ltd., STMicroelectronics NV, and Toshiba Corp. are some of the major market participants. Factors such as growing demand for power electronics, increasing focus on adopting renewable energy sources, and development of smart grids will offer immense growth opportunities. However, high sic material cost, increasing adoption of gan power devices, and high capital investment may impede market growth. To make the most of the opportunities, vendors should focus on growth prospects in the fast-growing segments, while maintaining their positions in the slow-growing segments.

To help clients improve their market position, this silicon carbide power devices market forecast report provides a detailed analysis of the market leaders and offers information on the competencies and capacities of these companies. The report also covers details on the market’s competitive landscape and offers information on the products offered by various companies. Moreover, this silicon carbide power devices market analysis report provides information on the upcoming trends and challenges that will influence market growth. This will help companies create strategies to make the most of future growth opportunities.

This report provides information on the production, sustainability, and prospects of several leading companies, including:

  • Cree Inc.
  • Fuji Electric Co. Ltd.
  • Infineon Technologies AG
  • Littelfuse Inc.
  • Mitsubishi Electric Corp.
  • ON Semiconductor Corp.
  • Renesas Electronics Corp.
  • ROHM Co. Ltd.
  • STMicroelectronics NV
  • Toshiba Corp.

Silicon Carbide Power Devices Market: Segmentation by Geography

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The report offers an up-to-date analysis regarding the current global market scenario, latest trends and drivers, and the overall market environment. APAC will offer several growth opportunities to market vendors during the forecast period. 48% of the market’s growth will originate from APAC during the forecast period. China, Japan, and South Korea (Republic of Korea) are the key markets for silicon carbide power devices in APAC. This report provides an accurate prediction of the contribution of all segments to the growth of the silicon carbide power devices market size.

Silicon Carbide Power Devices Market: Key Highlights of the Report for 2020-2024

  • CAGR of the market during the forecast period 2020-2024
  • Detailed information on factors that will drive silicon carbide power devices market growth during the next five years
  • Precise estimation of the silicon carbide power devices market size and its contribution to the parent market
  • Accurate predictions on upcoming trends and changes in consumer behavior
  • The growth of the silicon carbide power devices industry across APAC, Europe, North America, South America, and MEA
  • A thorough analysis of the market’s competitive landscape and detailed information on vendors
  • Comprehensive details of factors that will challenge the growth of silicon carbide power devices market vendors

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Research Methodology

Technavio presents a detailed picture of the market by way of study, synthesis, and summation of data from multiple sources. The analysts have presented the various facets of the market with a particular focus on identifying the key industry influencers. The data thus presented is comprehensive, reliable, and the result of extensive research, both primary and secondary.

INFORMATION SOURCES

Primary sources

  • Manufacturers and suppliers
  • Channel partners
  • Industry experts
  • Strategic decision makers

Secondary sources

  • Industry journals and periodicals
  • Government data
  • Financial reports of key industry players
  • Historical data
  • Press releases

DATA ANALYSIS

Data Synthesis

  • Collation of data
  • Estimation of key figures
  • Analysis of derived insights

Data Validation

  • Triangulation with data models
  • Reference against proprietary databases
  • Corroboration with industry experts

REPORT WRITING

Qualitative

  • Market drivers
  • Market challenges
  • Market trends
  • Five forces analysis

Quantitative

  • Market size and forecast
  • Market segmentation
  • Geographical insights
  • Competitive landscape

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Frequently Asked Questions

Silicon Carbide (SiC) Power Devices market growth will increase by 1065.45 million during 2019-2024.

The Silicon Carbide (SiC) Power Devices market is expected to grow at a CAGR of 23.75% during 2019-2024.

Silicon Carbide (SiC) Power Devices market is segmented by Product( Diodes, Modules, Transistors) Application( UPS and PS, PV inverters, IMDs, EV/HEVs, Others) Geographic( APAC, Europe, North America, South America, MEA)

Cree Inc., Fuji Electric Co. Ltd., Infineon Technologies AG, Littelfuse Inc., Mitsubishi Electric Corp., ON Semiconductor Corp., Renesas Electronics Corp., ROHM Co. Ltd., STMicroelectronics NV, Toshiba Corp. are a few of the key vendors in the Silicon Carbide (SiC) Power Devices market.

APAC will register the highest growth rate of 47.84% among the other regions. Therefore, the Silicon Carbide (SiC) Power Devices market in APAC is expected to garner significant business opportunities for the vendors during the forecast period.

China, US, Japan, Germany, South Korea (Republic of Korea)

  • Growing demand for power electronics is the driving factor this market.

The Silicon Carbide (SiC) Power Devices market vendors should focus on grabbing business opportunities from the Diodes segment as it accounted for the largest market share in the base year.